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900V超结VDMOS的设计 被引量：2

Design of a 900 V Super Junction VDMOS
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摘要 超结MOSFET具有优越的静态直流特性。在已有成功设计600 V超结VDMOS经验的基础上,提出了相应的工艺方法。利用TCAD仿真软件,对主要的工艺参数和器件电学参数进行仿真优化,得到击穿电压为929 V、比导通电阻为23.67 m Ω·cm2的超结VDMOS。 Super junction MOSFET has been proved to have excellent static DC characteristics.A fabrication method for super junction MOSFET was proposed based on the design of a 600 V super junction VDMOS.Main process parameters and electrical parameters of the device were simulated and optimized by TCAD simulator,and super junction VDMOS transistors with a breakdown voltage of 929 V and a specific on-resistance of 23.67 mΩ·cm-2 were fabricated.
作者 胡涛 李泽宏 张波
机构地区 电子科技大学电子薄膜与集成器件国家重点实验室
出处 《微电子学》 CAS CSCD 北大核心 2011年第2期289-292,共4页 Microelectronics
关键词 超结 VDMOS 功率MOSFET Super junction VDMOS Power MOSFET
分类号 TN386.1 [电子电信—物理电子学]
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参考文献9

  • 1CHEN X B, MAWBY P A, ROARD K, et al. Theory of a novel voltage sustaining layer for power devices [J]. Microelec J, 1998, 29(12): 1055-1011.
  • 2CHEN X B. Theory of a novel voltage sustaining (CB) layer for power devices [J]. Chin J Elec, 1998, 7(3): 211-216.
  • 3FUJIHIRA T. Theory of semiconductor superjunction devices [J]. Jpn J Appl Phys, 1997, 36(10): 6254-6262.
  • 4SHENOY P M, BHALLA A, DHOLNY G M. Analysis of the effect of charge imbalance on static and dynamic characteristics of the superjunction MOSFET [C]//Proc ISPSD. Toronto, Canada. 1999: 99-102.
  • 5WOLFGANG E, NIEDERNNOSTHEIDE F J, REZNIK D, et al. Advances in power electronic devices [C]// Int Elec Machines and Drives Conf. Washington D C, USA. 1999: 4-8.
  • 6ZHANG B, XU Z, HUANG ALEX Q, Analysis of the forward biased safe operating area of the super junction MOSFET [C]//IEEE Proc 12th Int Symp Pow Semicond Dev ga ICs. Toulouse, France. 2000: 37-40.
  • 7LORENZ L, DEBOY G, KNAPP A, et al. CoolMOSTM- a new milestone in high voltage power MOS [C]//11^th Int Syst Pow Semicond Dev and ICs. Toronto, Canada. 1999: 3-10.
  • 8SHENOY P M, BHALLA A, DHOLNY G M.Analysis of the effect of charge imbalance on static and dynamic characteristics of the superjunction MOSFET [C]// Proc ISPSD. Toronto, Canada. 1999: 99-102.
  • 9Avant Corporation. Medici User's Manual [Z]. 2004.

同被引文献17

  • 1张波,章文通,蒲松,乔明,李肇基.超结功率半导体器件[J].微纳电子与智能制造,2019,0(1):5-19. 被引量：9
  • 2LORENZ L. Trends in power integration state-of-the art and future [ C ]// Proceedings of the PCIM. Shanghai, China, 2002: 1-15.
  • 3BALIGA B J. Modern power device [ M ]. NewYork: John Wiley and Sons, 1957: 269-276.
  • 4LASKA T. The field stop IGBT-a new power device con- cept with a great improvement potential [ C] // Procee- dings of the 1SPSD. Toulouse, France, 2000: 555-555.
  • 5HENSON T, CAO J. Low voltage super junction MOS- FET simulation and experimentation [ C] // Proceedings of the ISPSD. Cambridge, UK, 2003: 37-40.
  • 6HATTORI Y, NAKASHIMA, KUWAHARA M, et al. Design of a 200 V super junction MOSFET with n-buffer region and its fabrication by filling [ C ] // Proceedings of the ISPSD. Kitakyushu, Japan, 2004: 189.
  • 7IWAMOTO S, TAKAHASHI K, KURIBAYASHI H, et al. Above 500 V class super junction MOSFETs fabricated by deep trench etching and epitaxial growth [ C ] // Pro- ceedings of the 17'h International Conference on Power Semiconductor Devices and ICs. California, USA, 2005: 31.
  • 8COE D J. High vohage semiconductor device, US: 4754310 [P]. 1988-04-20.
  • 9CHEN X B. Semiconductor power device with alternating conductivity type high voltage breakdown region, US: 5216275 [P]. 1993-02-21.
  • 10TIHANYI J. Power MOSFET, US: 5438215 [P]. 1995-08-10.

引证文献2

二级引证文献3

微电子学
2011年 第2期

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