摘要
实验研究了直流偏场和温度交替作用对布洛赫线存储器中垂直布洛赫线(VBL)链的影响。发现三类硬磁畴中VBL链是在临界温度范围[Tl,T2]内解体的,对于三类硬磁畴有着相同的T1,从而进一步证明了温度作用下硬磁畴畴壁中的VBL是逐步解体的,同时也证实了三类硬磁畴的畴壁结构是一致的。畴壁中VBL链开始不稳定的最小临界温度与畴壁中VBL的数目无关,而与VBL间的平衡间距有关。
The behavior of VBL in Bloch line Memory subjected to both direct current field and temperature was experimentally studied.We find an interval of critical temperature ,which can make VBL chains breakdown and is related to the parameter of magnetic bubble material.For the three kinds of hard domains,T1 is the same.It proves VBL in hard domains wall breakdown gradually affected by temperature,and it confirmed that the structure in three kinds of hard domains is the same.And this paper concludes that the disappearance of VBL is irrelevant to the amount of VBL,and relevant to the balance space of VBL.
出处
《东莞理工学院学报》
2011年第3期58-61,共4页
Journal of Dongguan University of Technology
基金
河北省自然科学基金项目(A2009000254)
河北师范大学博士基金资助项目(L2006B10)
