摘要
介绍了通过双晶ｘ 射线衍射测量超薄外延层厚度的一种方法。利用回摆曲线中的干涉条纹测量了通过ＭＢＥ生长的Ｇａ０．７Ａｌ０．３Ａｓ／Ｇａ０．９Ａｌ０．１Ａｓ／Ｇａ０．７Ａｌ０．
We introduce a method of measuring ultrathin epitaxital layer thickness.We have measured the thickness of Ga 0 7 Al 0 3 As/Ga 0 9 Al 0 1 As/Ga 0 7 Al 0 3 As structure by MBE with the interference fringes in rocking curve by x ray double crystal diffraction.
出处
《半导体技术》
CAS
CSCD
北大核心
1999年第6期45-46,58,共3页
Semiconductor Technology
