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白光LED用Ba_2B_2P2O_(10)∶Eu^(2+)绿色荧光粉的光谱特性 被引量:1

Spectral characteristics of Ba_2B_2P_2O_(10)∶Eu^(2+) green phosphor for white LED
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摘要 采用高温固相法制备了一种适于近紫外光激发,发射绿光的Ba2B2P2O10∶Eu2+材料,并研究了材料的发光性质.Ba2B2P2O10∶Eu2+材料的发射光谱为一峰值位于522 nm的非对称单峰宽谱;监测522 nm发射峰,所得激发光谱覆盖300~450 nm,主峰位于381 nm,为Eu2+的5d→4f跃迁特征激发谱带.利用van Uitert公式计算了Eu2+取代Ba2B2P2O10中Ba2+时所占晶体学格位,得出507 nm和542 nm发射峰分别归属于八配位和六配位的Eu2+发射.研究发现,Eu2+浓度对Ba2B2P2O10∶Eu2+材料的发射强度有影响,并判断出Eu2+在Ba2B2P2O10中发射的自身浓度猝灭机理为电偶极-电偶极相互作用. A novel green emitting phosphor,Ba2B2P2O10∶Eu2+,is prepared by solid state method,and its luminescent characteristics are investigated.BaCO3,H3BO3,NH4H2PO4 and Eu2O3 were used as starting materials.After these individual materials were blended and grounded thoroughly in an agate mortar,the homogeneous mixture was heated at 1 000 ℃ for 5 h in a reduce atmosphere(5:95(H2/N2)),and the phosphor were obtained.The phase present of the samples was characterized by powder X-ray diffraction(XRD).The spectral characteristics of the phosphors were measured by a SHIMADZU RF-540 fluorescence spectrophotometer.Ba2B2P2O10∶Eu2+ shows a one dissymmetrical band at 522 nm,and the excitation spectrum for 522 nm emission extends from 300 to 450 nm,and the highest peak locates at 381 nm.The crystallographic sites of Eu2+ in Ba2B2P2O10 were calculated by van Uitert formula.The result shows that 507 nm emission band originates from the eight sites of Eu2+,and that 542 nm emission band comes of the six sites of Eu2+.The effect of Eu2+ content on the emission intensity of Ba2B2P2O10∶Eu2+ phosphor was investigated,the result shows that the emission intensity of the phosphor increases with increasing Eu2+ concentration,then decreases,viz.,the concentration quenching exists,and the Eu2+ concentration corresponding to the maximal emission intensity is 3 mol%.And the concentration quenching mechanism is the d-d interaction.
出处 《光子学报》 EI CAS CSCD 北大核心 2011年第7期1087-1090,共4页 Acta Photonica Sinica
基金 国家自然科学基金(No.50902042) 河北省自然科学基金(No.E2009000209 No.E2010000283) 河北省教育厅基金(No.2009313) 发光与光信息技术教育部重点实验室研究基金(No.2010LOI12)资助
关键词 白光LED Ba2B2P2O10∶Eu2+ 光谱特性 White LED Ba2B2P2O10∶Eu2+ spectral characteristics
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  • 1SCHUBERT E F, KIM J K. Solid-state light sources getting smart[J]. Science, 2005, 308: 1274-1278.
  • 2PIMPUTKAR S, SPECK J S, DENBAARS S P, et al. Prospects for LED lighting[J]. Nature Photonics, 2009, 3: 180-182.
  • 3NAKAMURA S, FASOL G light emitters and lasers[M].The blue laser diode: GaN based Berlin: Springer, 1997: 216.
  • 4YAMADA M, NAITOU T, IZUMO K, etal. Red-enhanced white-light-emitting diode using a new red phosphor [J].Japanese Journal Applied Physics, 2003, 42(1) ; L20-23.
  • 5SHEU J K, CHANG S J, KUO C H, et al. White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors [J ]. IEEE Photonics Techology Letter, 2003, 15(1): 18-20.
  • 6BRINKLEY S, PFAFF N, DENAULT K A, et al. Robust thermal performance of Sr2Si5N8 : Eu^2+ : An efficient red emitting phosphor for light emitting diode based white lighting [J]. Applied Physics Letter, 2011, 99(24) : 241106-1-3.
  • 7OZDEN I, MAKARONA E, NURMIKKO A V, et al. A dual-wavelength indium gallium nitride quantum well light emitting diode [ J ]. Applied Physics Letter, 2001, 79 ( 16 ) : 2532-2534.
  • 8CHEN C H, CHANG S J, SU Y K. InGaN/GaN multiple- quantum-well dual-wavelength near-white light emitting diodes[J]. Physics Status Solidi (C), 2003, 0(7): 2257- 2260.
  • 9WANG X H, JIA H Q, GUO L W, et al. White light-ern itting diodes based on a single InGaN emission layer [J], Applied Physics Letter, 2007, 91(16) : 161912-1-3.
  • 10WANG X H, GUO L W, JIA H Q, et al. Control performance of a single-chip white light emitting diode by adjusting strain in InGaN underlying layer [J ]. Applied Physics Letter, 2009, 94(11): 111913-1-3.

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