摘要
讨论势垒层Si3N4的引入对黑硅光电探测器光电性能的影响。探测器采用金属-半导体-金属(MSM)器件结构在黑硅层和电极间增加一层势垒层以提高肖特基势垒,从而减低器件的暗电流。实验表明,在相同的光照情况下,有势垒层的探测器暗电流比无势垒层的探测器暗电流至少低1个数量级,且势垒层厚度增加30nm其暗电流降低约1个数量级,而光电流无明显改变。结果表明,沉积势垒层可有效地降低黑硅MSM探测器的噪声电流,提高信噪比(SNR)。
This paper discusses the influence of Si3 N4 barrier layer on photoelectric properties of black silicon photodetector. A barrier layer is added between the black silicon layer and the electrode in the metasemieonductor-metal （MSM） structure in order to increase the Schottky barrier, leading to the decrease of the dark current. According to the experiment, under the same lighting condition, the dark current obtained by adding barrier layer is one order of magnitude lower than the one without barrier layer and decreases by one order of magnitude when the thickness of the layer adds every 30 nm, while the photo current does not change obviously. This method lowers noise current and improves the signal-to- noise ratio （SNR） of black silicon photodetector.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2011年第10期1439-1442,共4页
Journal of Optoelectronics·Laser
基金
国家自然科学基金创新研究群体科学基金(61021061)
中国博士后科学基金资助项目(20090461332)
