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基于90nm CMOS工艺的60GHz射频接收前端电路设计 被引量:1

60 GHz RF Receiver Front-End in 90 nm CMOS Process
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摘要 设计了一款用于中国60 GHz标准频段的射频接收前端电路。该射频接收前端采用直接变频结构,将59~64 GHz的微波信号下变频至5~10 GHz的中频信号。射频前端包括一个四级低噪声放大器和电流注入式的吉尔伯特单平衡混频器。LNA设计中考虑了ESD的静电释放路径。后仿真表明,射频接收前端的转换增益为13.5~17.5 dB,双边带噪声因子为6.4~7.8 dB,输入1 dB压缩点为-23 dBm。电路在1.2 V电源电压下功耗仅为38.4 mW。该射频接收前端电路采用IBM 90 nm CMOS工艺设计,芯片面积为0.65 mm2。 A radio frequency(RF) receiver front-end for 60 GHz standard frequenc y range in China was presented.The front-end consists of a 4-stage LNA and a c urrent injection Gilbert mixer,which converts the RF signal from 59 GHz to 64 G Hz to an IF signal of 5-10 GHz.Electrostatic discharge(ESD) protection is tak en into consideration in the design of LNA.The conversion gain of the front-end by post simulation is 13.5-17.5 dB,the double side band(DSB) noise figure is 6.4-7.8 dB,and the input 1 dB compression point is-23 dBm.It consumes 3 8.4 mW from a 1.2 V supply.The front-end circuit is implemented in IBM CMOS 90 nm process and occupies an area of 0.65 mm2.
出处 《半导体技术》 CAS CSCD 北大核心 2011年第10期786-790,共5页 Semiconductor Technology
基金 国家科技合作项目(2009DFA12130)
关键词 60GHz频段 射频接收前端 低噪声放大器 混频器 互补金属氧化物半导体 60 GHz band RF receiver front-end low noise amplifier(LNA) mixer complementary metal oxide semiconductor(CMOS)
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