摘要
用40kV的Ni^+离子在室温下对玻璃衬底上生长的AlN薄膜进行离子注入,注入剂量为5.0×10^(16)ions/cm^2,在N_2气氛下分别经400℃,600℃退火1h后,用超导量子干涉仪分析样品磁学特性.结果表明,Ni注入AlN薄膜未退火样品显示铁磁性;经400℃退火后铁磁性增强,居里温度大于室温;经600℃退火后样品铁磁性消失显示为顺磁性.结合透射电子显微镜对注入样品进行微结构研究,揭示Ni注入是进行AlN磁性掺杂的有效手段.在Ni注入AlN制备得到的稀磁半导体中,Ni和相邻的N之间的p-d杂化被认为是Ni注入(Al,Ni)N体系中磁性起源机制.
AlN films are prepared by medium-frequency reactive magnetron sputtering at room temperature, and subsequently are implanted with 40 kV Ni ＋ ions at a rate of 5.0 × 10^16 ions/cm2. The magnetism properties of Ni ＋ implanted into A1N films are investigated by superconducting quantum interference device （SQUID）. The 400 ℃ annealing sample shows ferromagnetism, and 600 ℃ annealing sample shows paramagnetism. The magnetism is discussed combined with the structural characteristics given by transmission electron microscopic （TEM）. The results suggest that the p - d hybridization ferromagnetism is the main magnetic mechanism in the Niimplanted AlN films.
出处
《华北水利水电学院学报》
2011年第4期156-158,共3页
North China Institute of Water Conservancy and Hydroelectric Power
基金
河南省教育厅自然科学基础研究计划项目(2009B150016)
河南省科技厅基础与前沿技术研究计划项目(112300410261)
