摘要
介绍了硅片表面污染物的种类、来源及形成机理,论述了太阳能级硅片传统的RCA清洗技术中各种清洗液的清洗原理和优缺点,同时对改进的RCA清洗、HF/O3和电化学清洗等新型湿化学清洗技术进行了阐述,指出了太阳能级硅片化学清洗技术的发展方向。
The paper introduces the type,origin and formation mechanism of contaminants on the solar grade（SOG） silicon wafer surfaces.It summarizes the cleaning principle,advantages and disadvantages of some traditional cleaning solutions.The paper also introduces some new wet chemical cleaning technologies such as HF/O3 and electrochemical cleaning technique,pointing out the developing tendency of the SOG silicon wafer cleaning technique.
出处
《新余学院学报》
2011年第6期92-94,共3页
Journal of Xinyu University
关键词
光伏
硅片
湿化学
清洗
photovoltaic
silicon
wet chemistry
cleaning
