摘要
准确地提取RF-LDMOS小信号模型参数对LDMOS大信号模型建模十分重要,而且好的小信号模型能很好地反映微波器件的性能。针对LDMOS提出了一种改进的小信号模型参数提取方法,此方法增加了测试结构的建模和参数提取,极大地方便了S参数曲线的拟合,而且对于测试版图的研究有一定的指导意义。由此方法提取的小信号模型与实验测试数据在0.1～8 GHz拟合的很好,并且准确地预测了器件的特征频率。该模型和方法能够很好的适用于LDMOS的L,S波段小信号建模和参数提取。
The accurate parameter extraction of the RF-LDMOS small signal model is very important for building the large signal model of the LDMOS, and a good small signal model can exactly reflect the performances of a microwave device. An improved parameter extraction method of the LDMOS small signal model was presented. The method adds test structure modeling and its parameter extraction which greatly facilitates the curve-fitting, but also has a certain guiding significance for the study of the test structure layout. The measured data are fitted very well in the range of 0. 1-8 GHz, and the cut-off frequency （fr） can be better predicted by using this method. The model and method are well suited for the L- and S-band small-signal modeling and parameter extraction of LDMOS devices.
出处
《半导体技术》
CAS
CSCD
北大核心
2012年第2期159-163,共5页
Semiconductor Technology
关键词
LDMOS
小信号模型
去嵌入
参数提取
曲线拟合
later double-diffused MOSFET （LDMOS）
small signal model
de-embedding
parameter extraction
curve-fitting
