摘要
采用Ｔｉ／Ｃｕ／Ｔｉ多层中间层在１２７３Ｋ温度下进行氨化硅陶瓷部分瞬间液相连接，考察了保温时间对连接强度的影响，并对连接界面进行了ＳＥＭ，ＥＰＭＡ和ＸＲＤ分析．结果表明，通过Ｃｕ－Ｔｉ二元扩散促使液相与氨化硅发生界面反应，形成Ｓｉ_３Ｎ_４／ＴｉＮ／Ｔｉ_５Ｓｉ_３＋Ｔｉ_５Ｓｉ_４＋ＴｉＳｉ_２／ＴｉＳｉ_２＋Ｃｕ_３Ｔｉ_２（Ｓｉ）／Ｃｕ的梯度层．保温时间影响接头反应层厚度，从而影响接头的连接强度根据活性金属部分瞬间液相连接陶瓷的界面行为，建立了活性金属部分瞬间液相连接陶瓷的理论模型．该模型较好地解释了Ｔｉ／Ｃｕ／Ｔｉ和Ｔｉ／Ｎｉ／Ｔｉ连接氮化硅陶瓷的异同点和连接工艺参数的选择。
The partial transient liquid phase(PTLP) bonding of silicon nitride was carried out at 1273 K with Ti/Cu/Ti multi-interlayer. The effect of bonding condition and interfacial reaction on the joint strength was investigated and the interfacial microstructures were observed and analyzed using SEM, EPMA and XRD respectively. It was shown that Cu-Ti liquid alloy forms on the surface of silicon nitride and reacts with silicon nitride on the interface at 1273 K to form Si3 N4 /TiN/ Ti5Si3 + Ti5Si4 + TiSi2/ TiSi2 + Cu3Ti2 /Cu gradient interface. The joint strength increases with the increase of the holding time. When the holding time is longer than 25 min, the further increase of holding time causes the decrease of joint strength. According to the microstructural analyses, the joint strength is controlled by the thickness of reaction layer, which is affected by the bonding conditions. Based on the interfacial behavior of PTLP bonding of ceramic with active metal, a theoretical model for PTLP bonding of ceramic with active metal was suggested. The.model may explain the difference between Cu-Ti and Ni-Ti during PTLP bonding of silicon nitride and be used to choose the bonding parameters.
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第2期171-176,共6页
Acta Metallurgica Sinica
关键词
活性金属
氮化硅
连接强度
界面反应
陶瓷
连接
active metal, partial transient liquid phase bonding, silicon nitride, joining strength, interface reaction
