摘要
在GaAs单片微波集成电路(MMIC)设计中,准确的器件模型对于提高电路设计成功率和缩短电路研发周期起着重要作用。首先采用标准的GaAs MMIC工艺制造出不同栅指数和单位栅宽的开关PHEMT器件,然后对加工的开关电路在"开"态(Vgs=0 V)和"关"态(Vgs=-5 V)进行宽频率范围内的测量,基于测量结果建立起一个参数化的GaAs PHEMT开关等效电路模型,最后通过单刀单掷(SPST)开关来验证参数化模型。应用该参数化模型设计的电路实测与仿真结果基本吻合,证明参数化的GaAs PHEMT模型是可用的。该模型可用于30 GHz以下GaAs PHEMT工艺开关MMIC电路仿真设计。
Accurate device models are very important to improve the success rate of circuits and shorten the development cycles in GaAs monolithic microwave integrated circuits（MMIC） design.The pseudomorphic high electron mobility transistor（PHEMT） was manufactured in different gate figures and unit gate widths with normative GaAs MMIC technology.Then the manufactured switch circuits in wide frequency range were measured under different bias conditions.A new parametric model was proposed for the open（Vgs =0 V）and pinch off（Vgs =-5 V）states for GaAs PHEMT switches.Single-pole single-throw（SPST）switches were manufactured to verify the validity of parametric switch model.Measured results are good fit for simulation results with switch circuits derived from parametric switch model.The proposed GaAs PHEMT model is available in the design of GaAs PHEMT switch MMIC below 30 GHz.
出处
《半导体技术》
CAS
CSCD
北大核心
2012年第5期347-350,共4页
Semiconductor Technology
关键词
开关
模型
砷化镓
赝配高电子迁移率晶体管
单片微波集成电路
switch
model
GaAs
pseudomorphic high electron mobility transistor（PHEMT）
monolithic microwave integrated circuits（MMIC）
