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5GHz0.18μm CMOS宽带LC VCO 被引量：3

A 5 GHz Broadband LC VCO in 0.18-μm CMOS Process
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摘要 采用0.18μm RF CMOS工艺,设计了一个5GHz的宽带电感电容压控振荡器。该压控振荡器的电路结构选用互补交叉耦合型,采用噪声滤波技术降低相位噪声,并采用开关电容阵列扩展其调谐范围。后仿真结果表明,实现了4.44～5.44GHz的宽调谐。振荡器的电源电压为1.8V,工作电流为2.78mA,版图面积为0.37mm2。 A 5 GHz LC VC（） with wide tuning range was designed in 0. 18μm RF CMOS process. In this VCO, a complementary cross couple structure was utilized, and a noise filter was used to reduce phase noise. In addition, a switched capacitor array was also used to extend its tuning range. Results from post layout simulation showed that the VCO achieved a wide tuning range from 4. 44 GHz to 5.44 GHz. The circuit consumed 2.78 mA of power from a 1.8 V supply. The LC VCO occupied a chip area of 0.37 mm2.
作者 邓翔 段吉海 杨丽燕 李石林
机构地区 桂林电子科技大学信息与通信学院
出处 《微电子学》 CAS CSCD 北大核心 2012年第3期372-375,共4页 Microelectronics
基金 国家自然科学基金资助项目(61161003 61166004)
关键词 电感电容压控振荡器 CMOS电路 相位噪声 LC VCO CMOS IC Phase noise
分类号 TN453 [电子电信—微电子学与固体电子学]
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参考文献7

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同被引文献24

  • 1LIU C H, WANG R L, CHEN C Y, et al. A multi- band current-reused VCO for 2.5 GHz and 3.4 GHz WiMAX applications [C] // 3rd Int Conf Innovative Comput Inform Control. Dalian, China. 2008: 236- 239.
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  • 6ZHOU W, CHEN X, DAI K, et al. Switched inductor VCO based on tapped vertical solenoid inductors [J]. Elec Lett, 2012, 48(9): 509-511.
  • 7TANG X, HUANG F, SHAO M, et al. A wide band0. 13 μm CMOS LC-VCO for IMT-advanced and UWB applications [J]. J Semicond, 2013, 34(1): 015004-1.
  • 8CAO SG, HANK F, TAN X, et al. A 1. 0 V differential VCO in 0.13 μm CMOS technology.
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  • 10LID, YANG Y T, ZHU Z M, et al. A 5-GHz LC VCO with digital AAC and AFBS for 2.4 GHz ZigBee transceiver applications [J]. Mieroelec J, 2015, 46 (6) : 415- 421.

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微电子学
2012年 第3期

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