摘要
黄铜矿型CuInSe2 (CIS)多晶薄膜具有优良的光伏特性。在对现有制备工艺进行对比分析的基础上 ,首次采用sol-gel法制备了Cu2 In2 O5(CIO)薄膜 ,经Se化获得了结构均匀、表面平整、组成接近于化学计量比的CIS薄膜 ,其电阻率介于 10 5～ 10 6Ω·cm之间 ,与国外采用其它高成本工艺制备的薄膜性能相当。基于上述实验 ,对Se化CIO法制备CIS半导体薄膜的机理及材料的光伏性能进行了分析。
Thin film CuInSe 2 (CIS) is prepared by a process which involves two steps:the formation of Cu 2In 2O 5 (CIO) by sol-gel method, and reaction of CIO with selenium vapor to form CIS.This technique provides CIS thin film with good uniformity.The resistivity of the CIS thin film is 10 5～10 6 Ωcm which can be approached to that of the material by PVD method.The cost of two-steps process is lower than PVD method.Preparation mechanism and properties of CIS thin film by this technique is discussed.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2000年第2期146-148,共3页
Journal of Functional Materials
基金
矿物岩石材料国家专业实验室开放基金
地矿部百名跨世纪科技人才培养计划基金
