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在FeNiCo-C系统中生长板状Ⅰb型宝石级金刚石 被引量:6

Growth of synthetic tabular Ⅰb-type large diamond crystal in FeNiCo-C system under HPHT
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摘要 FeNiCo触媒作为一种合成金刚石的新型触媒材料,在金刚石制造业中有着广泛的应用。而板状宝石级金刚石大单晶由于具有诸多优异性能,在各个领域具有很重要的应用价值。本研究在高温高压条件下,利用温度梯度法在FeNiCo触媒中生长板状的Ⅰb型宝石级金刚石。实验表明,调整晶床高度使金刚石具有适宜的生长速度0.34 mg/h;沿﹛100﹜面生长优质板状Ⅰb型宝石级金刚石的最佳温度区间为1 209~1 216℃;在此基础上合成出尺寸达3 mm的优质板状Ⅰb型宝石级金刚石大单晶。 FeNiCo alloy, as applications in the diamond a new type of solvent material for diamond synthesizing, has a wide range of manufacturing industry. Tabular large diamond crystals have many excellent properties and are used in various fields. In this research, tabular large diamond crystals were grown in FeNiCo- C system by using the temperature gradient method under high temperature and high pressure. The results showed that the appropriate growth rate of diamond was 0.34 rag/h, which can be got by changing the crystal bed height. Along the | 100| growth facets, the best growth temperature for high-quality tabular Ⅰ b-type large diamond crystal was from 1 209 ℃ to 1 216 ℃. Under these parameters, a large Ⅰ b-type high-quality tabular large diamond crystal with the size of 6 mm was synthesized.
出处 《金刚石与磨料磨具工程》 CAS 2012年第2期15-19,共5页 Diamond & Abrasives Engineering
基金 国家自然基金项目(51172089) 河南理工大学博士基金项目(B2010-32)
关键词 FeNiCo触媒 板状Ⅰ b型宝石级金刚石 温度梯度法 FeNiCo alloy tabular Ⅰ b-type large diamonds temperature gradient method
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