摘要
为在室温条件下进行氧化铝薄膜的原子层沉积,自行设计了一套微波回旋共振等离子体辅助原子层沉积装置,以三甲基铝作为铝源前躯体,氧气作为氧化剂,在室温下于氢氟酸溶液中处理过的单晶硅基片上进行了氧化铝薄膜的沉积。利用扫描电子显微镜、原子力显微镜、高分辨率透射电子显微镜、X-ray射线衍射、X-ray射线光电子能谱等分析手段测试了薄膜的表面形貌和成分,结果表明制备的氧化铝薄膜为非晶态结构,铝、氧元素含量配比接近2/3,同时薄膜表面非常光滑平整而且致密,表面粗糙度<0.4nm。通过高分辨率透射电子显微镜的截面图,可以估算出薄膜厚度约为80nm,界面非常清晰、平整,薄膜质量较高,沉积速率为0.27nm/周期,沉积速率较热沉积大大提高。
In order to achieve atomic layer deposition of alumina thin films at room temperature, taking trimethylaluminum （TMA） as the precursor and oxygen as the oxidant, respectively , we used an atomic layer deposition（PA-ALD） setup of homemade electron cyclotron resonance （ECR） assisted with plasma to deposit AI203 thin film on the single crystal silicon surface at room temperature. Through scanning electron microscope （SEM）, atomic force microscope, high resolution transmission electron microscope, X-ray diffraction and X-ray photoelectric spectroscopy, the surface topography and composition of the as-deposited films were tested. It is found that the A12 03 films are amorphous, and the atomic ratio of aluminum to oxygen is close to 2/3. The film surface is very smooth and the roughness is smaller than 0.4 nm. The cross-sectional images show that the film thickness is 80 nm with specially clear and smooth interface, better film quality, and the deposition rate is 0.27 nm in one cycle, which is much larger than the thermal ALD.
出处
《高电压技术》
EI
CAS
CSCD
北大核心
2012年第7期1731-1735,共5页
High Voltage Engineering
基金
国家自然科学基金(11175024)
北京市自然科学基金(1112012)
北京印刷学院校级资助项目(E-b-2012-35)~~
