摘要
InGaAlP双异质结LED结构设计的目的在于减少器件的光、电、热损耗 本文分析各层成分、层厚度、掺杂浓度以及有关的辅助技术 ,例如厚电流扩展层、电流隔离层、布拉格反射层、金属电镀反射层、透明衬底等对LED性能的影响 。
The aim of the structural design for InGaAIP heterojunction LED is to decrease the optical, electrical and thermal losses of instruments. Effects of these factors are discussed, such as layer component, layer thickness, doping concentration and some other related measurements. A structural model for the fine performance HB LED is proposed.
出处
《华南师范大学学报（自然科学版）》
CAS
2000年第2期13-16,共4页
Journal of South China Normal University(Natural Science Edition)
基金
广州市科委重大科技攻关项目![(JB0 2 ) 1999- Z- 0 35 - 0 1) ]
