期刊文献+

过氧化氢抛光液体系中钌的化学机械抛光研究 被引量:8

Chemical Mechanical Planarization of Ruthenium in Hydrogen Peroxide-Based Slurry
在线阅读 下载PDF
导出
摘要 本文研究了过氧化氢(H2O2)抛光液体系中金属钌的化学机械抛光行为,采用电化学分析方法和X射线光电子能谱仪(XPS)分析了氧化剂和络合剂对腐蚀效果的影响,利用原子力显微镜(AFM)观察抛光表面的微观形貌.结果表明:在过氧化氢抛光液体系中,金属钌表面钝化膜的致密度和厚度与醋酸(CH3COOH)和H2O2的浓度有关.抛光液中醋酸主要通过促进阳极反应的进行从而增强抛光液对金属钌的化学作用,CH3COOH作为络合剂比三乙醇胺(TEA)或酒石酸(C4H6O6)得到的抛光速率更高.低浓度H2O2通过增强抛光液对金属钌的化学腐蚀,抛光速率增大,较高浓度H2O2可能通过在金属表面形成较厚的氧化膜,抛光速率下降.XPS图谱说明钌片浸泡在含醋酸介质过氧化氢体系抛光液后,钌、氧原子相对含量之比约为2∶3,而且金属钌被氧化到四价和八价,这可能是因为金属钌表面生成RuO2和RuO4.抛光后的金属钌表面在5μm×5μm范围内平均粗糙度Sa由抛光前的33 nm降至6.99 nm. In this paper,chemical mechanical polishing behaviors of Ruthenium(Ru) in hydrogen peroxide(H2O2)-based slurry are investigated.The effect of the oxidizing agent and complexing agents on the corrosion behaviors are investigated by using electrochemical measurement and X-ray photoelectron spectroscopy.And the polished Ru surface is characterized by atomic force microscopy.Results show that the tightness and thickness of the passive film on the surface of Ru are related to the concentrations of CH3COOH and H2O2.CH3COOH can accelerate the anode reaction and enhance the chemical action of the slurry on the surface of Ru.The material removal rate(MRR) of Ru in slurries with CH3COOH as complexing agent is higher than that of TEA or C4H6O6.H2O2 at low concentration promotes the chemical corrosion ability to corrode Ru surface and increases MRR,the increasing of H2O2 concentration may promote the formation of a thick oxide film on Ru surface,which reduces the corrosion rate and the MRR at higher concentration of H2O2.The XPS results suggest that the atomic ratio of Ru to oxide is about 2: 3 and Ru is oxidized to Ru4+ and Ru8+ just after the immersion of Ru into the H2O2-based slurry with CH3COOH because of the formation of RuO2 and RuO4 on the Ru surface.The roughness average(Sa) of Ru surface can be reduced from 33 nm to 6.99 nm after polished within 5 μm×5 μm area.
出处 《摩擦学学报》 EI CAS CSCD 北大核心 2012年第5期421-427,共7页 Tribology
基金 国家自然科学基金项目(50975002) 安徽工业大学创新团队项目(TD201204) 教育部高校留学回国人员科研项目资助~~
关键词 化学机械抛光 电化学检测 过氧化氢 络合剂 ruthenium, chemical mechanical planarization, electrochemical measuremen, hydrogen peroxide, complexingagents
  • 相关文献

参考文献4

二级参考文献58

  • 1胡伟,魏昕,谢小柱,向北平.CMP抛光半导体晶片中抛光液的研究[J].金刚石与磨料磨具工程,2006,26(6):78-80. 被引量:19
  • 2李秀娟,金洙吉,康仁科,郭东明.磨料对铜化学机械抛光过程的影响研究[J].摩擦学学报,2005,25(5):431-435. 被引量:9
  • 3李哲,肖茂春.铸造纯钛抛光方法的研究[J].华西口腔医学杂志,2006,24(3):214-216. 被引量:13
  • 4[1]Ahn Yoomin,Yoon Joon-Yong,Baek Chang-Wook etc.Chemical mechanical polishing by colloidal silica-based slurry for micro-scratch reduction[J].Wear,2004,257:785~789
  • 5[2]Du Tianbao,Dnyanesh Tamboli,Luo Ying etc.Electrochemical characterization of copper chemical mechamical planarization in KIO3 slurry[J].Applied Surface Science,2004,229:167~ 174
  • 6[3]Thomas F A.Bibby,John A.Adams,Karey Holland etc.CMP CoC reduction:slurry reprocessing[J].Thin Solid Films,1997,308 -309:538 ~542
  • 7[5]Liu Yuling,Zhang Kailiang,Wang Fang etc.Investigation on the final polishing slurry and technique of silicon substrate in ULSI[J].Microelectronic Engineering,2003,66:438 ~444
  • 8[6]Geonja Lim,Jong-Ho Lee,Joosun Kim etc.Effects of oxidants on the removal of tungsten in CMP process[J].Wear,2004,257:863 ~ 868
  • 9[7]Kim Nam-Hoon,Lim Jong-Heun,Kim Sang-Yong etc.Effects of phosphoric acid stabilizer on copper and tantalum nitride CMP[J].Materials Letters,2003,57:4601 ~4604
  • 10[8]Wang Y L.Wu J,Liu C W etc.Material characteristics and chemicalmechanical polishing of aluminum alloy thin films[J].Thin Solid Films,1998,332:397~403

共引文献31

同被引文献53

  • 1李秀娟,金洙吉,苏建修,康仁科,郭东明.铜化学机械抛光中电化学理论的应用研究[J].润滑与密封,2005,30(1):106-108. 被引量:7
  • 2梅燕,韩业斌,聂祚仁.用于超精密硅晶片表面的化学机械抛光(CMP)技术研究[J].润滑与密封,2006,31(9):206-212. 被引量:17
  • 3张伟,路新春,刘宇宏,雒建斌.缓蚀剂在铜化学机械抛光过程中的作用研究[J].摩擦学学报,2007,27(5):401-405. 被引量:10
  • 4Kang S Y, Choi K H, l.ee S K, et al. Deposition and char- acterization of Ru thin films prepared by metalorganic chemical vapor deposition [J]. Journal of the Korean Phys- ical Society, 2000, 37 (6): 1040-4.
  • 5Perng D C, Yeh J B, Hsu K C. Phosphorous doped Ru film for advanced Cu diffusion harriers [J]. Applied Surface Sci- ence, 2008, 254(19).. 6059-62.
  • 6Choi B H, Lim Y H, Lee J H0 et al. Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition [J]. Microelec- tronie Engineering, 2010, 87(5/6/7/8) 1391-5.
  • 7Xie Q, Jiang Y L, Musschoot J, et al. Ru thin film grown on TaN by plasma enhanced atomic layer deposition E J3. Thin Solid Films, 2009, 517(16): 4689-93.
  • 8Li J, Lu H S, Wang Y W, et al. Sputtered Ru-Ti, Ru-N and Ru-Ti-N films as Cu diffusion barrier [J]. Mieroelee-tronie Engineering. 2011, 88(5): 635-640.
  • 9Perng D C, Hsu K C, Tsai S W, et al. Thermal and elec- trical properties of PVD Ru(P) film as Cu diffusion barrier [J]. Microelectronie Engineering, 2010, 87(3): 365-369.
  • 10Malik F, Hasan M. Manufacturability of the CMP process [J]. Thin Solid Films, 1995, 270(1/2): 612-615.

引证文献8

二级引证文献29

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部