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立方氮化铝在一定压强下的电子结构与热力学性质 被引量:2

The Electronic Structure and Thermodynamic Properties of Cubic Aluminum Nitride under Certain Pressure
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摘要 运用超软赝势平面波第一性原理方法,对立方AlN晶体在0~30GPa的不同压强下进行了结构几何优化,得到平衡晶格参数;在优化结构的基础上计算了电子结构、弹性常数、体弹模量与德拜温度;结果表明立方氮化铝晶体为间接宽带隙半导体,随着压强的增加,晶格参量减小,弹性常数、体弹模量与德拜温度增加,带隙先增大后减小,在7GPa时带隙为5.117eV,达到最大值. By the first-principles plane-wave ultra-soft pseudo-potential method of density functional theory,electronic structure,elastic constants and thermodynamic properties of Cubic Aluminum Nitride under the pressure(0-30GPa) had been studied,based on the optimized structure.The result of calculation was obtained: with the increasing of pressure,and the lattice parameter was decreased,and the elastic constants,the bulk modulus and the Debye temperature were increased,and the energy gap rose until 5.117eV when the pressure increased to 7GPa,then decreased.
出处 《宜宾学院学报》 2012年第6期43-46,共4页 Journal of Yibin University
关键词 氮化铝 电子结构 弹性 德拜温度 热力学性质 Aluminum Nitride electronic structure elastic Debye temperature thermodynamic properties
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  • 1徐彭寿,谢长坤,潘海斌,徐法强.3C-SiC的能带结构和光学函数的第一性原理计算[J].中国科学技术大学学报,2006,36(9):1001-1004. 被引量:4
  • 2石玉平,王永宁,黄莉.微波消解-电感耦合等离子体-质谱法测定塑料包装材料中痕量重金属元素[J].分析仪器,2007(2):41-44. 被引量:23
  • 3郝跃,彭军,杨银堂,等.碳化硅宽带隙技术[M].北京:科学出版社,2000:1-6.
  • 4CASADY JB, JOHNSON R W. Status of silicon carbide(SiC) as a wide-bandgap semiconductor for high-temper-ature applications: a review [ J]. Solid-State Electronics,1996,39(10) :1409-1422.
  • 5SHAFFER P T B. A review of the structure of silicon car-bide [J ]. Acta Crystallographica, 1969, 25 ( 3 ) : 477-488.
  • 6ZYWIETZ A,KARCH K, BECHSTEDT F. Influence ofpolytypism on thermal properties of silicon carbide [ J ].Phys Rev B,1996, 54(3) : 1791-1798.
  • 7KARCH K,PAVONE P, MAYER AP, et al. First-prin-ciples study of thermal properties of 3C SiC[ J]. PhysicaB,1996,220: 448450.
  • 8ZENONGD, SHUJIA Z,Zhao Y S. A density functionalHardness and fracture toughness of brittle materials : theo-ry study[J]. Phys Rev B, 2004,70(18) : 184117.
  • 9KAWAMURA T. Silicon carbide crystals grown in nitro-gen atmosphere [ J ]. Mineralogical Journal, 1965 , 4 :333-355.
  • 10SEGALL M D, LINDAN P JD, PROBERT M J, et al.First-principles simulation : ideas, illustrations and theCASTEP code [ J ]. J Phys Cond Matter, 2002,14(11):2717-2744.

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