摘要
With the discovery of giant magnetoresistance(GMR),research effort has been made to exploiting the influence of spins on the mobility of electrons in ferromagnetic materials and/or artificial structures,which has lead to the idea of spintronics.A brief introduction is given to GMR effects from scientific background to experimental observations and theoretical models.In addition,the mechanisms of various magnetoresistance beyond the GMR are reviewed,for instance,tunnelling magnetoresistance,colossal magnetoresistance,and magnetoresistance in ferromagnetic semiconductors,nanowires,organic spintronics and non-magnetic systems.
With the discovery of giant magnetoresistance （GMR）, research effort has been made to exploiting the influence of spins on the mobility of electrons in ferromagnetic materials and/or artificial structures, which has lead to the idea of spintronics. A brief introduction is given to GMR effects from scientific background to experimental observations and theoretical models. In addition, the mechanisms of various magnetoresistance beyond the GMR are reviewed, for instance, tunnelling magnetore- sistance, colossal magnetoresistance, and magnetoresistance in ferromagnetic semiconductors, nanowires, organic spintronics and non-magnetic systems.
基金
supported by the National Natural Science Foundation of China (Grant Nos. 51125004,10974120,B13029 and JQ200901)
the National Basic Research Program of China (Grant Nos. 2013CB922303and 2009CB929202)
