摘要
用液相外延的方法在 Cd Zn Te衬底上生长 Hg1 - x Cdx Te材料 ,获得了表面形貌好 ,位错密度低 ,组份均匀的碲镉汞外延材料 ,生长工艺对材料的参数控制有较好的重复性 .外延材料经热处理后 ,材料的 P型和 N型电学参数都达到较好的水平 。
The liquid phase epitaxy growth of Hg 1-x Cd x Te films from Te rich solution on (111)B CdZnTe substrate in slide boat was reported. Microscope and IR transmittance spectra and Hall measurements were carried out to characterize the quality of epilayers. Hg 1-x Cd x Te epilayers in 1～3μm,3~5μm,8~14μm ranges were grown with flat surface, low density of dislocation and uniform composition. Good growth reproducibility of material parameters was obtained. Under an appropriate thermal annealing condition, some good results on electrical properties of p type and n type Hg 1-x Cd x Te were achieved, and they could be reproduced well.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第2期145-148,共4页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金!(编号 69425002)资助项目
