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多晶硅薄膜结晶团晶化机理的研究

Research on the Formation Mechanism of Crystal Group in Fabricating Poly-Si Thin Film
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摘要 本文用PECVD法在石英玻璃上沉积非晶硅薄膜,然后用快速光退火和传统电阻炉退火方法晶化生长多晶硅薄膜,用拉曼光谱仪、XRD和场发射扫描电镜观察分析薄膜,发现在制备的多晶硅薄膜表面存在结晶团现象,并对这一现象的晶化机理进行了分析。 Undoped amorphous silicon film deposited by PECVD on quartz glass, and annealed by rapid thermal annealing （RTA） and furnace annealing （FA） respectively, the films were characterized by Rarnan spectra, X-ray diffraction （ XRD ） and scanning electronic microscope （ SEM ） respectively. It could be found phenomenon of crystal group in fabricating poly-Si thin film. The formation mechanism of the phenomenon has been studied.
作者 靳瑞敏 蔡志端 苍利民 阎韬 徐建军 栗书增
机构地区 南阳理工学院太阳能电池研究所 安彩高科股份有限公司博士后工作站 郑州大学物理工程学院
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2013年第2期278-281,共4页 Journal of Synthetic Crystals
关键词 非晶硅薄膜 二次晶化 多晶硅薄膜 结晶团现象 晶化机理 a-Si： H film recrystallization poly-Si thin film phenomenon of crystal group formation mechanism
分类号 TM914.42 [电气工程—电力电子与电力传动]
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参考文献12

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人工晶体学报
2013年 第2期

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