摘要
采用变脊宽原理和对接生长技术,设计并制作了4通道分布反馈(DFB)激光器阵列与多模干涉(MMI)耦合器、半导体光放大器(SOA)的单片集成器件。在25℃的测试温度下,激光器的阈值电流约55～60mA;当激光器注入150mA、SOA注入50mA电流时,各通道的出光功率保持在2mW以上,出射波长处于1 550nm波段,边模抑制比(SMSR)大于33dB,4通道可实现单独或同时工作。
The monolithic photonic integrated circuit （PIC） is the core component in the future high-capacity,low-power consumption optical network systems. As a typical photonics integrated device,monol ithically integrated multi-wavelength distributed feedback （DFB） laser array plays an important role in dense wavelength division multiplexing （DWDM） optical transmission systems. The monolithic integration of four distributed feedback lasers with a 4 × 1 multimode-interference （MMI） optical combiner and semiconductor optical amplifier （SOA） using varing width ridge method and butt-joint technology is proposed and demonstrated in this paper. The monolithically integrated chip is 2 500 μm long and 400 μm wide. The active and passive materials are integrated by the butt-joint technique,and the varing ridge width is used to adjust the effective index of the laser material, so that multi-wavelength emission can be achieved by normal holographic exposure. This method is simple and practical. The integrated device is tested at 25° for characterization. The average output power of 2 mW is achieved when the current of LD and semiconductor optical amplifier （SOA） is 150 mA and 50 mA,respectively. The threshold current of the device is 55--60 mA at 25 ℃. The lasing wavelength is around 1550 nm and more than 33 dB side mode suppression ratio （SMSR） is obtained. The four channels can operate separately or simultaneously.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2013年第3期424-428,共5页
Journal of Optoelectronics·Laser
基金
国家“863”计划(2011AA010303,2012AA012203)
国家“973”计划(2011CB301702)
国家自然科学基金(61021003,61090392)资助项目
