期刊文献+

A Novel Serial Hybrid Three-level NPC Topology for Multi-MW Medium Voltage Wind Power Converters 被引量:5

A Novel Serial Hybrid Three-level NPC Topology for Multi-MW Medium Voltage Wind Power Converters
在线阅读 下载PDF
导出
摘要 提出一种新型的串联混合三电平中点钳位(neutralpoint clamped,NPC)拓扑,该拓扑是基于传统三电平NPC拓扑的改进和优化,引入大功率IGBT的串联应用。该新型拓扑中,桥臂的两个外管分别用两个低压IGBT串联,两个内管均用高压IGBT。在多兆瓦级中压风电变流器中,大功率IGBT的开关损耗很大,从而限制了开关频率。提出的新型拓扑通过低压IGBT的串联来减小功率器件的损耗,从而提高开关频率,同时可减小输出滤波器的尺寸。通过传统三电平拓扑和新型串联混合三电平拓扑IGBT损耗的对比,说明新拓扑的优势。通过改变门极驱动电阻实现串联IGBT的均压,对新拓扑的应用具有重大意义。最后通过新拓扑的单相样机验证新拓扑的正确性和可行性。 With the increase of wind power converter' capacity, the medium voltage converter is applied to improve the converter's efficiency. Multi-level topology is widely applied in the medium voltage converter. In the medium voltage wind power converter, the IGBT's rated voltage and current are large. However, the high power and voltage IGBT's switching losses are large, which limits the switching frequency of the converter and the further improvement of converter's efficiency.
出处 《中国电机工程学报》 EI CSCD 北大核心 2013年第9期I0007-I0007,共1页 Proceedings of the CSEE
基金 国家863高技术基金项目(2011AA05A104).
关键词 电压转换器 拓扑结构 风力发电 中压 NPC 三电平 混合 串联 three-level neutral point clamped (NPC) serial hybrid voltage sharing multi-MW medium voltage wind power converter
  • 相关文献

同被引文献88

  • 1姜艳姝,徐殿国,赵洪,刘宇.多电平SPWM变频器中共模电压抑制技术的研究[J].中国电机工程学报,2005,25(3):18-22. 被引量:36
  • 2Pittini R, Zhang Z, Andersen M A E. Switching per- formance evaluation of commercial SiC power de- vices (SiC JFET and SiC MOSFET) in relation to the gate driver complexity[ C]// ECCE Asia Downunder (ECCE Asia). ['S. L]: IEEE, 2013: 233-239.
  • 3Kadavelugu A, Baliga V, Bhattacharya S, et al. Zero voltage switching performance of 1 200 V SiC MOSFET, 1 200 V silicon IGBT and 900 V Cool- MOS MOSFET[C~ // Energy Conversion Congress and Exposition (ECCE). FS. L~: IEEE, 2011:1819-1826.
  • 4Cui Y, Chinthavali M, Tolbert L M. Temperature dependent Pspice model of silicon carbide power MOSFET[C] // Applied Power Electronics Confer- ence and Exposition. IS. L].. IEEE, 2012.. 1698- 1704.
  • 5Fu R Y, Grekov A, Hudgins J, et al. Power SiC DMOSFET model accounting for nonuniform current distribution in JFET regionFJ]. IEEE Transactions on Industry Applications, 2012,48(1) : 181-190.
  • 6Mirzaee H, Bhattacharya S, Ryu S H, et al. Design comparison of 6.5 kV Si-IGBT,6.5 kV SiC JBS di- ode,and 10 kV SiC MOSFETs in megawatt con- verters for shipboard power systemiC]/z/z Electric Ship Technologies Symposium. Alexndria, VA IEEE,2011 .- 248-253.
  • 7Jordan J, Esteve V, Kilders S, et al. A comparative performance study of a 1 200 V Si and SiC MOS- FET intrinsic diode on an induction heating inverter [J]. IEEE Transactions on Power Electronics, 2014,29(5) .. 2550-2562.
  • 8Wang Yujen, Tsao W, Zheng Zeng. Characterization and modeling of the junction diode for accurate RF model in the 36 nm MOSFET[C]//Radio Frequen- cy Integrated Circuits Symposium Montreal. [S. L~: IEEE,2012: 543-546.
  • 9OLiveira A B M, Moreno R L, Ribe~ro R E. Short circuit fault diagnosis in switches of a single-phase full-bridge inverter[C] // Power Electronics Confer- ence. ES. L-}.. IEEE,2013: 1107-1113.
  • 10Haitham A R,Joachim Holtz,Jose Rodriguez,et al.Medium-voltage multilevel converters-state of the art, challenges, and requirements in industrial applications[J].IEEE Trans. on Industrial Electronics,2010,57(8):2581-2596.

引证文献5

二级引证文献60

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部