摘要
研究了 Si O2 掺杂对 Sn O2 - Zn O- Nb2 O5 压敏陶瓷的影响。实验结果表明 ,Si O2 可以十分显著地影响Sn O2 - Zn O- Nb2 O5 压敏陶瓷的物理和电子性质。掺杂范围为 0 .0 5 %～ 0 .40 % (摩尔分数 )时 ,材料密度在 6.2 1～ 6.5 6g/ cm3之间变动 ,非线性系数在 7.42～ 12 .80之间。烧失率、势垒电压和非线性系数的测量均表明 :掺有x (Si O2 ) =0 .2 %的 Sn O2 - Zn O- Nb2 O5 压敏陶瓷的非线性最好 ,其势垒电压为 0 .67e V,非线性系数达 12 .
In Chinese. Effects of dopant SiO_2 on the SnO_2-ZnO-Nb_2O_5 varistors are investigate d. SiO_2 do pant has a significant effect on the physical and electrical properties. When S i O_2 dopant in the range of 0.05～0.4 mol %, density changes between 6.21and 6.56 g /cm3, and nonlinear coefficient between 7.42 and 12.8. when SiO_2 dopant i s 0.2 m ol%, the most effective grain boundary formed, and the best nonlinearity can be acquired with α of 12.8 and φ _B of 0.76 eV. (17 rtf.)
出处
《电子元件与材料》
CAS
CSCD
2000年第5期9-10,共2页
Electronic Components And Materials
