摘要
报道了用半导体材料 Ga As实现氙灯抽运 Nd:YAG激光器的被动调 Q运转 ,测量了激光器的阈值、脉冲宽度和输出能量。从 Ga As的能级结构出发 ,理论上研究了 Ga As材料的饱和吸收原理 ,建立了调 Q激光器速率方程并给出了数值解 ,对理论结果与实验结果进行了比较和讨论。
A passively Q-switchedNd∶YAG laser using a semi-insulating GaAs is demonstrated. The laser characteristics, such as the threshold, single pulse energy and the pulse width were measured. Meanwhile, The saturable absorption dynamics is studied based on the energy level structure. The rate equations and their numerical solutions for GaAs as passive Q switch were given. The experimental and theoretical results are compared and discussed.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2000年第6期744-749,共6页
Acta Optica Sinica
基金
国家教委博士点基金!(No.980 4 2 2 0 2 )
山东大学晶体材料研究所国家重点实验室开放基金资助课题
