摘要
用射频磁控溅射方法得到了低应力立方氮化硼薄膜。红外光谱结果表明 ,薄膜具有很好的附着力 ,且含有少量的E BN和w BN。电子衍射谱表明薄膜表层是纯立方相。同时利用此方法得到了E BN薄膜。认为在薄膜生长过程中可能经历了一个从E BN到c BN的相转变过程。
In this paper we report that we have obtained the E BN film that was named after the method by which it was obtained (E=Explosion).During the BN films deposition,we suggest a model of phase transition from E BN to c BN.We can explain the c BN nucleation during the deposition by this model.The film we obtained has very good adhesion due to the phase transition.
出处
《高压物理学报》
CAS
CSCD
北大核心
2000年第2期111-114,共4页
Chinese Journal of High Pressure Physics
基金
国家自然科学基金资助项目!(19774 0 2 5
598310 4 0 )
