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铜掺杂氧化锌磁性和电子结构GGA和GGA+mBJ研究 被引量:1

Electronic structure and magnetism for Cu-doped ZnO:by GGA and GGA+mBJ density functional calculation
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摘要 采用基于密度泛函理论的全势线性缀加平面波方法,分别采用GGA和GGA+mBJ为交换关联势,对铜掺杂在稳定的六角纤锌矿结构氧化锌的电子结构和磁性进行了计算.由GGA计算得到的电子结构表明铜掺杂氧化锌是半金属材料,而GGA+mBJ计算得到的电子结构表明铜掺杂氧化锌不具有半金属材料特征,而是典型的磁性半导体材料,与Buchholz等的实验结果一致,相对于GGA近似计算,GGA+mBJ计算的结果更能反映材料的性质. Using the full potential linearized augment plane wave method with the generalized gradient approxi- mation (GGA) and generalized gradient approximation plus modified Becke and Johnson potential (GGA + mBJ) the ferromagnetism and electronic structures for the Cu-doped wurtize ly. The GGA calculations show Cu-doped ZnO is promising half metallicity, dicate Cu-doped ZnO is ferromagnetic semiconductor, not half metallicity. consistent with the Buchholz~ experimental results. Our investigations show ZnO are investigated, respective- while GGA + mBJ calculations in- The GGA + mBJ calculations are that the the GGA + mBJ can more exactly illustrate the materials' properties than that of the results obtained by using GGA calculations.
出处 《河南理工大学学报(自然科学版)》 CAS 北大核心 2013年第1期114-117,共4页 Journal of Henan Polytechnic University(Natural Science)
基金 国家自然科学基金资助项目(11174179) 宜昌市科技项目(A2011-302-27) 三峡大学基金项目(KJ2010B013)和黔科合J字[2012]2315
关键词 全势线性缀加平面波方法 交换关联势 磁性 电子结构 full potential linearized augment plane wave method exchange correlation potential magnet-ism electronic structures
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