摘要
针对触发器在纳米级工艺下容易受空间辐射中单粒子效应的影响而产生软错误的情况,基于CPSH触发器结构,研究了一种对单粒子效应中SET/SEU加固的延时采样软错误防护(DSSEP)触发器结构。该触发器由延时采样单元、输入传输单元、软错误鲁棒存储锁存器和反相输出单元组成。延时采样单元对来自其他逻辑电路的输出数据进行采样,采样数据经输入传输单元写入软错误鲁棒存储锁存器,并通过一个反相输出单元输出。仿真结果表明,DSSEP触发器具有很好的SET/SEU加固能力。经过比较和分析,证明DSSEP触发器与具有同样SET/SEU加固能力的保护门触发器(GGFF)相比,在晶体管数目和传播延时方面仅为GGFF的62%和33%。
Flip-flop fabricated in nanometer process is vulnerable to single event effects in space radiation,which lead to soft error.Based on clock pre-charge SEU hardened（CPSE） flip-flop structure,a delay sampling soft error protection（DSSEP） flip-flop was proposed to mitigate SET/SEU in single event effects.The new flip-flop consisted of delay sampling unit,input transfer unit,soft error robust storage latch and inverting output unit.The delay sampling unit sampled data from output of other logic circuits,which was written into soft error robust storage latch through input transfer unit and output via an inverting output unit.Spectre simulation showed that the proposed DSSEP flip-flop had a 33% of propagation delay with only 62% of transistors,compared to guard gate flip-flop（GGFF） with the same SET/SEU hardness.
出处
《微电子学》
CAS
CSCD
北大核心
2013年第3期369-374,共6页
Microelectronics
基金
上海市科委项目(08706201000
08700741000)
上海市教委重点学科项目(J50104)
关键词
单粒子效应
CPSH触发器
C单元
Single event effect
Clock pre-charge SEU hardened flip-flop
C element
