摘要
离子束溅射技术是制备Ta2O5薄膜的重要技术之一。采用正交试验设计方法,系统研究了Ta2O5薄膜的折射率、折射率非均匀性、消光系数、沉积速率和应力与工艺参数(基板温度、离子束压、离子束流和氧气流量)之间的关联性。通过使用分光光度计和椭圆偏振仪测量Ta2O5薄膜透过率光谱和反射椭偏特性,再利用全光谱反演计算的方法获得薄膜的折射率、折射率非均匀性、消光系数和物理厚度。Ta2O5薄膜的应力通过测量基底镀膜前后的表面变形量计算得到。实验结果表明:基板温度是影响Ta2O5薄膜特性的共性关键要素,其他工艺参数的选择与需求的薄膜特性相关。研究结果对于制备不同应用的Ta2O5薄膜制备工艺参数选择具有指导意义。
Ion beam sputtering is one of the best important technologies for preparing Ta205 thin films. correlation properties of Ta205 thin films and preparative parameters （substrate temperature, ion beamvoltage, ion beam current and oxygen flow） were systemic researched by using the orthogonal experimentdesign method. The Ta205 thin films properties （refractive index, extinction coefficient, deposition rate,stress and inhomogeneity of refractive index） were studied. The refractive index, extinction coefficient,physical thickness and inhomogeneity of refractive index were measured by multiple wavelength curve-fitting method from the reflectance and transmittance of samples. The stress of thin film was measured byelastic deformation of thin film-substrate system. An experimental design strategy used substratetemperature, ion beam voltage, ion beam current, and oxygen flow as the variables. The experimentalresults indicate that the temperature of substrate is key influence parameter on Ta205 thin films propertiesand other preparative parameters are correlation with specific thin films properties. The results can be used to select the proper preparative parameters for preparing Ta2Os thin films with different applications.
出处
《红外与激光工程》
EI
CSCD
北大核心
2013年第7期1770-1775,共6页
Infrared and Laser Engineering
基金
国家自然科学基金(61235011)
天津市科委项目(10JCYBJC01500
12JCQNIC01200)
关键词
离子束溅射
Ta2O5薄膜
正交实验
光学常数
沉积速率
应力
ion beam sputterings
Ta2Os thin film
orthogonal experiment
optical constants
deposition rate
stress
