摘要
用动态方法跟踪观测a-Si:H薄膜原位退火过程中发生的晶化现象,获得晶化形貌的显徽图象,通过对图象的数字采集和计算,得到a-Si:H薄膜样品在不同退火温度下,显徽图像的Sandbox关系曲线。结果表明,在一定条件下所形成的微结构具有分形结构特性。计算了显徽图象的分维,讨论了a-Si:H薄膜结构驰豫(相变)与分形结构形成的关系。
Crystallization phenomena of hydrogenated amorphous silicon (a-Si: H) films during in situ annealing process are investigated by transmission electron microscope (TEM). The micromorphology images are observed in terms of dynamic method. Using image processing technique, the sandbox relationship graph of sample's microphotograph under different annealing temperatures (450℃ and 800℃) is obtained. The results show that under some conditions, the microstructure formed in the a-Si:H film has characteristic of fractal structure. The fractal dimension of the microphotograph is calculated. The relationship between the structural phase transition of the amorphous silicon film and the fractal structure is discussed.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1991年第6期91-93,共3页
Acta Electronica Sinica
