摘要
理论计算已逐渐成为从原子尺度上研究Si/SiO2界面特性的必要手段,选择合适的Si/SiO2界面原子结构模型是准确计算Si/SiO2界面特性的前提。梳理比较了Si/SiO2界面特性研究方面目前主要的实验研究结果及其理论计算结果,介绍了Si/SiO2界面原子结构模型及其特点。并从Si衬底晶向、过渡区的组成与厚度以及电子特性方面,分析了这些模型的优缺点及其适用性。认为以亚氧化态Si作为过渡层的模型能更好地解释实验数据,并适用于界面结构特性和电子特性等的仿真计算。本研究对改进Si/SiO2原子结构模型、研究界面缺陷以及在原子尺度上分析界面缺陷对器件特性影响有着重要的意义。
Theoretical calculation has gradually become an indispensable way to study the Si/SiO2 interface characteristics at the atomic scale. Choosing an appropriate Si/SiO2 interface atomic structure model is the precondition to accurately calculate the Si/SiO2 interface characteristics. The main results of the experimental study and theoretical calculation of the Si/SiO2 interface characteristics were sorted and compared, and the atomic structure models and their characteristics of the Si/SiO2 interface were introduced. The advantages and disadvantages of these models and their applicabilities were analyzed in terms of the crystal orientation of Si substrate, the composition and thickness of the transition layer and the electronic properties. As a result, it is considered that the model with the silicon suboxide as the transition layer can better explain the experimental data, and it is suitable for the simulation of the interface structural and electronic properties. This study has important significance to improve the Si/SiO2 atomic structure model, study the interface defects and analyze the effects of interface defects on device performances at the atomic scale.
出处
《微纳电子技术》
CAS
北大核心
2013年第10期615-622,共8页
Micronanoelectronic Technology
关键词
原子结构
电子特性
界面结构
硅
氧化硅
过渡层
atomic structure
electronic property
interface structure
silicon
silicon oxide
transition layer
