摘要
Cu(In,Ga)Se2(CIGS)thin films are prepared by a single-stage process and a three-stage process at low temperature in the co-evaporation equipment.The quite different morphologies of CIGS thin films deposited by two methods are characterized by scanning electron microscopy(SEM).The orientation of CIGS thin films is identified by X-ray diffraction(XRD)and Raman spectrum,respectively.Through analyzing the film-forming mechanisms of two preparation processes,we consider the cause of such differences is that the films deposited by three-stage process at low temperature evolve from Cu-poor to Cu-rich ones and then back to Cu-poor ones.The three-stage process at low temperature results in the CIGS thin films with the(220)/(204)preferred orientation,and the ordered vacancy compound(OVC)layer is formed on the surface of the film.This study has great significance to large-scale industrial production.
Cu（In,Ga）Se2 （CIGS） thin films are prepared by a single-stage process and a three-stage process at low temperature in the co-evaporation equipment. The quite different morphologies of CIGS thin films deposited by two methods are characterized by scanning electron microscopy （SEM）. The orientation of CIGS thin films is identified by X-ray dif- fraction （XRD） and Raman spectrum, respectively. Through analyzing the film-forming mechanisms of two prepara- tion processes, we consider the cause of such differences is that the films deposited by three-stage process at low tem- perature evolve from Cu-poor to Cu-rich ones and then back to Cu-poor ones. The three-stage process at low tempera- ture results in the CIGS thin films with the （220）/（204） preferred orientation, and the ordered vacancy compound （OVC） layer is formed on the surface of the film. This study has great significance to large-scale industrial production.
基金
supported by the National High Technology Research and Development Program of China(No.2012AA050701)
