摘要
了研究低温下电子倍增CCD(EMCCD)的电荷倍增特性,根据电子碰撞电离原理,建立了电离率模型;并依据雪崩倍增积分关系,针对所分析的EMCCD器件,建立了其低场强的倍增模型.通过倍增模型的理论计算结果与TI公司提供的实际器件TC285SPD和TC253SPD的倍增曲线比较,说明所提出模型的数据能够很好地拟合实际的倍增曲线.该模型可以方便地计算在固定栅极电压下的电子信号通过多级级联电子倍增寄存器后的总增益,进而可用于EMCCD相机的增益调整和校正.
To study the charge multiplying characteristic of an electron multiplying charge-coupled device（EMCCD）, an ion- ization rate model is presented based on the impact-ionization theory.Aiming at two TI IMPACIRON EMCCD devices, we develop a multiplication model at low fields using avalanche multiplication integral formula. Compared with the multiplication curves on the datasheets of both devices of TC285SPD and TC253SPD, the calculated data from the model are taken as a reasonable fit to the ac- tual curves. A method is put forward to predict the amounts of signal passing through the multi-stage cascaded electron multiplication register containing a fixed-voltage gate, which is useful to adjust and correct the gain of EMCCD devices. The model is suitable for lower temperature environment, in which electron-multiplication technology can be applied to photon counting strategies.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2013年第9期1826-1830,共5页
Acta Electronica Sinica
基金
国家自然科学基金委员会与中国科学院天文联合基金资助(No.10978013)
关键词
半导体器件
电荷耦合元件(CCD)
低温
电子倍增
电离率
数学建模
semiconductor devices
charge-coupled device（CCD）
low temperature
eleclron multiplication
ionization coef-ficient
mathematic model
