摘要
对GaAs基共振隧穿二极管(RTD)的I-V特性随温度(T)的变化进行了系统测量,并基于此I-V特性,采用第一正阻区斜率法和第二正阻区I-V特性法测量了RTD的直流串联电阻(Rs)。分析、比较了两种方法各自的特点,发现Rs随T的降低开始阶段增大,随着T进一步降低趋于一定值或略有升高后趋于一定值。结合峰值电流(Ip)和有效起始电压(Vi)随T的变化规律解释了峰值电压(Vp)随T的降低移向高电压的现象。
In this paper, the I-V characteristics changing with temperature of GaAs-based RTD have been measured systematically. Based on these IV characteristics, the D. C series re- sistance（Rs） of RTD is measured by adopting both methods of the first positive region slope and second positive region I-V curve. Then the features between two methods have been analysed and compared. The experimental results show that Rs increases as temperature T decreases at the first step, then decreases or slightly increases, and finally approaches a definite value. An explanation is provided for this phenomenon in detail. In addition, an explanation of peak voltage（Vp） shift- ing to high voltage as temperature T decreases is made by considering the variation of peak cur- rent（Ip） and effective threshold voltage（V~） with temperature.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2014年第1期18-23,共6页
Research & Progress of SSE
关键词
共振隧穿二极管
串联电阻
低温I-V特性
峰值电压(V批
)随p度变化
resonant tunneling diode
series resistance
low temperature I-V characteristic
peak voitage（Vp） variation with temperature
