摘要
IGBT在控制脉冲大电流时,回路杂散电感中存在较高电流变化率所形成的纳秒高尖峰电压,从而产生过压损坏。通过分析3种类型(C型、RC型和RCD型)吸收电路的特点,采用RCD型和C型吸收电路的组合后,可以有效地使尖峰能量向脉冲后沿分散,使高压尖峰转化为低压震荡。最终可将IGBT在关断时的C-E极间电压控制在不超过母线电压的1/3,从而达到保护IGBT的目的。
A nanosecond high voltage peak is observed when IGBT is used to control large current pulse. It is produced by a salutatory current reducing rate along with the stray inductances, and the IGBT is led to overvoltage damage. By analyzing three styles of snubber circuits （ Type C, Type RC and Type RCD）, a combination of type RCD and C is considered. It is efficient to disperse the peak energy, and turns the high voltage peak to low voltage oscillation. And more, the voltage Vce of IGBT does not exceed 1/3 busbar voltage. The goal of IGBT protection can be achieved.
出处
《江西科学》
2014年第1期95-98,共4页
Jiangxi Science
关键词
IGBT
大电流
过压保护
RCD吸收电路
IGBT, Large current, Overvoltage protection, RCD Snubber Circuit
