摘要
介绍了用微波ＣＶＤ法制备的一种新型低阈值电压大电流密度金刚石薄膜场发射冷阴极，阈值电压低于１．０９ Ｖ／μｍ，场发射电流密度高达４１８ ｍＡ／ｃｍ２，这是目前文献中报道的最好结果之一．文中还探讨了金刚石薄膜场电子发射机制．
Field emitter is the key of vacuum microelectronic devices. A novel diamond films field emission cathode, with characteristic of threshold voltage as low as 1.09 V/μm and emission current density as high as 418 mA / cm2, was reported. It was fabricated with a microwave CVD technique. The emission mechanism was also investigated.
出处
《北京工业大学学报》
CAS
CSCD
2000年第3期116-119,共4页
Journal of Beijing University of Technology
基金
国家自然科学基金资助项目!(19874007
69876003)
北京市自然科学基金资助项目!(2982013)
关键词
金刚石薄膜
场电子发射
负电子亲和势
diamond films, field electron emission, negative electron affinity (NEA)
