摘要
根据电化学 Ｃ－Ｖ测量 ＡｌＧａＩｎＰ外延片获得的载流子浓度深度分布数据，以及其 ＬＥＤ外延片封装后的工作电压，计算了其中Ｂ＋－Ｎ与Ｐ＋－Ｐ两种同型结的接触电势差，指出调制掺杂同型结的掺杂浓度分布是影响ＬＥＤ工作电压的另一大因素，并提出了进一步降低 ＬＥＤ工作电压的有效措施．
Based on the results of AlGaInP LED samples measured by electro-chemical C-V profiler and their work voltages, we analyzed the contact-voltage difference from the homo-junctions, such as N+-N and P+-P junction, pointed out that the carrier density distribution of the modulated doping have a distinctive effect on the work voltage of HB-LED, and presented the method decreasing further HB-LED's work voltage.
出处
《量子电子学报》
CAS
CSCD
北大核心
2001年第3期278-280,共3页
Chinese Journal of Quantum Electronics
