摘要
64× 64元 IRFPA CMOS读出电路是为红外探测器配套使用的数据处理芯片 ,用于对红外探测器产生的信号进行积分采样并且串行输出。为提高灵敏度及改善信号质量 ,取样电路的源跟随器的两个 NMOSFET采用了零开启电压 ;并且采用了双采样结构 ,用来减小噪声的影响。芯片的数字模块与模拟模块间用电源和电线进行了良好的隔离 ,减小了相互间的影响。电路工作电压1 0 V,芯片面积 5 .6× 7.9mm2 。本文简述了电路功能 ,重点介绍了该电路的制造工艺 ,分析了工艺中的重点 ,即电路采用 P型 ( 1 0 0 )单晶硅衬底、N阱 CMOS双层多晶硅双阈值工艺。双层多晶硅用来制作芯片内的电容。第一层多晶硅仅用作电容下极板 ,第二层多晶硅作电容的上极板、栅和部分连线 ,为了保证电容值及击穿电压 。
cell IRFPA CMOS read circuit is designed for infrared detector,it can integral and sample the signal which produced by an infrared detector,and output with string.The supply voltage of circuit is 10V,area of chip is 5.6×7.9mm 2.The circuit adopt N well CMOS process,it has double layer of poly-silicon and two threshold voltages on P type single crystal silicon.The double layer of poly-silicon is used for capacitance of the chip,the first layer of poly-silicon is used as lower pole broad,the second poly-silicon layer is used as superior pole broad,gate and part of connect lines.For the sake of capacity of capacitance and threshold voltage,the medium between double poly silicon layers is composted of SiO 2 and Si 3N 4.For meeting the techniques of next process,the diameter of join on pad layer is 10μm,and keep the alignment mark for indium pole lithography.
出处
《微处理机》
2001年第4期13-15,共3页
Microprocessors
