摘要
采用离子注入方法制备β- Fe Si2 薄膜 ,选择 C作为掺杂元素 ,得到了β- Fe Si2 硅化物层与基体间的界面平直、厚度均一的高质量薄膜 .经透射电镜分析可知 ,引入 C离子后硅化物层的微结构向有利于薄膜质量的方向发展 ,晶粒得到细化 ,β- Fe Si2 层稳定性提高 .从微结构角度考虑 ,引入 C离子对于提高β- Fe Si2 薄膜的质量是很有益处的 .进一步进行光学吸收表征 ,发现 C离子的引入对 β- Fe Si2 层的 Egd值没有产生不良影响 .讨论了 Egd值的影响因素 ,如制备方法、工艺参数、基体取向、掺杂离子种类、掺杂离子数量、退火温度等等 ,解释了文献报道的不同 Egd
Ion beam synthesis of metallic silicide thin films in Fe Si system doped with C is investigated with the aim to fabricate high quality semiconducting β FeSi 2 layer on silicon substrate.The structure morphology evolution is characterized using transmission electron microscopy.Carbon doped film has a higher quality than binary Fe Si films.In particular,annealing at 500-700℃ leads to the formation of a flat and continuous β type silicide layer.Ion beam synthesis of metallic silicide thin films of Fe Si system doped with C can indeed improve the β FeSi 2 film quality and thermnal stability.An optical emission spectroscopy characteriztion of the IBS films is reported and the factors influencing the band gap values such as synthesis process,Si substrate orientation,doping,and annealings are discussed.
基金
国家自然科学基金资助项目 (批准号 :5 9872 0 0 7)~~
