摘要
本文根据化学热力学平衡理论,建立了完整的计算方法,对MOCVD TMG-AsH_3-H_2和TMG-AsH_3-He体系的均相与异相化学反应平衡条件下42个气相杨种的分压随温度和V/Ⅲ比的变化进行了细致的计算和比较,分析了生长参数所引起的气相分压的改变对系统的质量输运、掺杂特性及材料质量的影响。
According to thechemical thermodynamic equilibrium theory, a complete numerical method of computation was established Partial pressures of 42 gas-reaction spocies versus tomperature and V/Ⅲ ratio variation in the system of TMG-AsH_3-H_2 and TMG-AsH_3-He were calculated and compared under homogeneous and heterogeneous equilibrium conditions. Influence of partial pressures variation to the mass transport, doping characteristics and material quality caused by growth parameters were analysed.
出处
《人工晶体学报》
EI
CAS
CSCD
1991年第1期64-69,共6页
Journal of Synthetic Crystals
关键词
MOCVD
半导体
汽相沉积
MOCVD, thermodynamic equilibrium, Chemical equilibrium, (CH_3)_3 Ga, AsH_3
