摘要
采用N +、C +离子注入拟南芥 (Arabidopsisthaliana)种子 ,统计了种子的发芽指数 (发芽率和发芽势 ) ;用改良的RAPD技术对N+离子注入种子植株的DNA进行11个引物的随机片段多态性扩增。结果表明 ,合适剂量的N+、C+离子注入可使种子发芽率提高 ,两种离子注入种子的发芽率峰值 (分别为92.3 %和74.4 % )都在5×1014ions/cm2;分析N +离子注入材料发现 ,在1×1013 -1×1016ions/cm2剂量范围内 ,基因组DNA的变异率与发芽指数的变化趋势基本一致 ,变异率峰值 (9.0 % )在1×1015 ions/cm2。结果提示 ,分析低能N+离子诱变效应的最佳注入剂量在1×1014-5×1015 ions/cm2。对N+、C+离子注入的比较发现 ,一定范围内同等剂量C+离子注入的诱变率高于N
The seeds of Arabidopsis thaliana implanted with low energy N+ and C+ ions were used, and germination indices (germination percentage and germination impetus) were counted. By means of improved RAPD method, random fragment polymorphism amplification of genome DNAs of the Arabidopsis thaliana plants grown from N+ ion implanted seeds was done with 11 primers, 4 of which amplified differential fragments. The results showed that, with a certain appropriate dosage of N+ or C+ ions, the germination percentage may be increased. Both of the peak germination percentage values of the two kinds of ions (92.3% and 74.4% respectively) were at 5×1014 ions/cm2. The analysis of the N+ implanted materials revealed that, within the limit of implantation from 1×1013-1×10 16 ions/cm2, the change tendency of genome DNA variation percentages is basically consistent with that of germination indices, and the peak value of variation percentages (9.0%) was at 1×1015 ions/cm2. This suggested that the optimum implantation doses for analyzing the mutagenic effects of low energy N+ ion are in the range of 1×1014-5×1015 ions/cm2. According to the comparison between N+ and C+ ion implantation, the mutagenic percentage of C+ ion, within a certain range, is higher than that of N+ ion at the same dosage.
出处
《生物物理学报》
CAS
CSCD
北大核心
2002年第2期251-255,共5页
Acta Biophysica Sinica
基金
国家自然科学基金重大项目资助课题 (19890300)
