摘要
集成无源器件(IPD)技术可以将分立的无源器件集成在衬底内部,提高器件Q值及系统集成度。由于高阻硅衬底具有良好的射频特性,高阻硅IPD技术可以制备出Q值高达70以上的电感。高阻硅IPD基于薄膜技术具有高精度、高集成度等特点,可将无源器件特征尺寸缩小一个数量级。同时可利用成熟的硅工艺平台,便于批量生产降低成本。此外,高阻硅IPD技术可与硅通孔(TSV)技术兼容,可实现三维叠层封装。分析表明,高阻硅IPD技术在系统集成中具有广泛应用前景。
Integrated passive device（IPD）technology can integrate discrete passive devices into a substrate,and improve the Q factor and system integration level. The inductor whose Q factor is up to 70 can be prepared by high resistance silicon IPD （HRS-IPD） technology because the HRS substrate has a good RF property. HRS-IPD based on thin film technology has the characteristics of high precision and high integration;meanwhile,by which the feature size can be reduced by one order of magnitude. Batch fabrication with lower cost can be realized with the mature silicon technology. Furthermore,HRS-IPD technology can be combined with through silicon via（TSV）technology to realize 3D system packaging. The analyses indicate that the HRS-IPD technology has a good application prospect in system integration.
出处
《现代电子技术》
2014年第14期128-131,共4页
Modern Electronics Technique
基金
国防预研资助项目
国家自然科学基金资助项目(51205375)
关键词
IPD
系统集成
高阻硅
无源器件
滤波器
IPD
system integration
high resistance silicon
passive device
filter
