摘要
基于传输线理论,推导了GaN HEMT沟道分布式等效电路模型,为有效提取GaN HEMT小信号模型参数提供了依据。设计了一种新颖的鱼骨型GaN HEMT器件结构,由于采用了较短的栅指,非常有利于纵向散热,与常规型HEMT器件结构相比,热阻有了明显改善,但也增加了建模的复杂度。采用分布式建模技术,为鱼骨型器件建立了一种分布式等效电路模型,模型在1~20 GHz内与实测S参数吻合较好,表明分布式建模技术可以用于准确地模拟鱼骨型GaN HEMT器件的高频特性。
Based on the transmission line theory,a distributed channel equivalent circuit model was deduced f or GaN HEMTs,which validated the reliability of the small-signal model extraction strategy for GaN HEMTs. A novel fish-bone structure GaN HEMT was designed and fabricated. The device adopts a short gate finger which facilitates the heat dissipation in the longitudinal direction,and the thermal resistance is improved significantly compared with the regularly designed HEMT device,while the complexity of modeling is increased. A distributed equivalent circuit model was established u tilizing distribution modeling methodology for the fish-bone device. Good agreement between the model and measurement for S parameter is obtained from 1 GHz to 20 GHz,which shows that such a modeling approach can be used to precisely characterize the high-frequency performance of a fish-bone GaN device.
出处
《半导体技术》
CAS
CSCD
北大核心
2014年第9期671-673,698,共4页
Semiconductor Technology
