摘要
借助于霍尔效应、拉曼散射、光致发光及电致发光测试技术,研究了氢等离子体处理以及随后的高温退火过程对ZnO薄膜及ZnO纳米棒光学及电学性质的影响.实验结果表明:氢在ZnO薄膜中不仅充当浅施主,而且还可以钝化晶界处缺陷相关的非辐射复合中心,从而使得载流子浓度及迁移率增大,近带边紫外发光增强.然而,钝化晶界的氢热稳定性较差,500℃时已经完全扩散出ZnO薄膜,因此,500℃退火后载流子迁移率及近带边紫外发光强度迅速减弱.
The effects of hydrogen-plasma treatment and subsequent annealing on the electrical and optical properties of ZnO were investigated by a combination of Hall measurement, Raman scattering, and photoluminescence. The results showed that hydrogen, as shallow donor, could also passivate the non-radiative combination center related to the defects in the boundary region, leading to increased carrier concentration, higher mobility and enhanced ultra-violet emission. But the hydrogen in the boundary region was not stable, it was released from the ZnO film at 500℃, causing a quick decrease of the mobility and near band edge emission.
出处
《物理实验》
2014年第11期43-45,48,共4页
Physics Experimentation
基金
国家自然科学基金项目资助(No.61106065)
中央高校基本科研业务费项目资助(No.2652013067)
大学生创新项目资助(No.2013BXY048)
关键词
ZNO
氢等离子体
光电性质
ZnO
hydrogen-plasma
photo-electronic properties
