摘要
在沉积时间分别为1 h、1.5 h、2 h及2.5 h的条件下,分别用磁控溅射法制备了Zn S薄膜,用XRD、SEM、台阶仪、椭偏仪等实验仪器进行物性检测,最终发现,沉积时间越长的薄膜,晶粒越小,密度越大,折射率越大;消光系数受晶粒大小、晶界多少、孔隙率等多种因素影响,呈现复杂变化。
We fabricated ZnS films by magnetron sputtering with different deposition time from 1 h to 2.5 h. They are detected by the XRD, SEM, Step profiler and ellipsometer. It was found that the longer the deposition time is, the higher the density is, the smaller the crystal size is and the higher the refractivity is. The extinction coefficient is influenced by the crystal size, the number of crystal boundaries and the porosity.
出处
《真空》
CAS
2015年第1期27-30,共4页
Vacuum
基金
国家自然科学基金资助项目(批准号:60876006
60376007)
北京市教育委员会科技计划重点项目资助(批准号:KZ201410005008)
关键词
磁控溅射法
宽禁带半导体
Zn
S
magnetron sputtering
wide band gap semiconductor
ZnS
