摘要
混频器是太赫兹器件中传输信号的基本元件,具有重要的研究价值。介绍了一种以MEMS工艺为基础的新型的太赫兹混频器设计和加工工艺。该太赫兹混频器采用具有高介电常数SU-8光刻胶作为介质层,然后在SU-8胶介质层上进行光刻、电镀微带线,实现了采用正负胶结合的牺牲层工艺加工制作出了太赫兹混频器。
Mixer is a basic RF device for signal transportation and has potential applications in many fields. A novel sub-millimeter mixer device based on MEMS technology has been designed and fabricated. In this design,SU-8 photoresist which has a high dielectric constant,was used as the dielectric layer of the device. The subsequent processes,such as photolithography,electroplating of micro-strip etc.,were carried out on SU-8 dielectric layer. By using positive- and negative photoresist sacrifical process,a novel sub-millimeter mixer was demonstrated.
出处
《传感技术学报》
CAS
CSCD
北大核心
2015年第1期9-12,共4页
Chinese Journal of Sensors and Actuators
