摘要
基于第一性原理计算方法,研究了Mn掺杂GaAs体系的电子结构、磁结构及磁性来源.首先,计算研究了GaAs的电子结构,证实其半导体性质;其次,发现Mn掺杂浓度为6.25%的GaAs体系的稳定磁结构为铁磁构型,其态密度仍具有半导体性质,分析其磁性主要来源于Mn原子.
Using first principles calculation method,we study the electronic structures,magnetic order and the origination of mag-netism of Mn doped GaAs. Firstly,the calculated electronic structure shows that GaAs is semiconductor. Secondly,it is found that the 6. 25% Mn doped GaAs system is stable in FM configuration. The density of states illustrates a semiconductor structure and the mag-netic moment mainly comes from Mn atom.
出处
《河南工程学院学报（自然科学版）》
2015年第2期78-80,共3页
Journal of Henan University of Engineering：Natural Science Edition
基金
河南省科技攻关计划项目(132102210141)
关键词
稀磁半导体
第一性原理
电子结构
磁性质
diluted magnetic semiconductor
first principle calculations
electronic structure
magnetic properties
