摘要
采用固相法制备了掺杂(K0.5Bi0.5)TiO3(KBT)的钛酸钡基无铅PTC陶瓷材料(K0.5Bi0.5)xBa(1–x)TiO3。利用X射线衍射、扫描电子显微镜、电阻-温度测试对材料的微观组织和热敏特性进行了表征,研究了晶界处应力对所制陶瓷材料居里温度(tC)的影响,发现通过构建更多的氧八面体结构来减小晶界应力有助于提高居里温度,并制出了居里温度为137℃的无铅PTC元件。
The （K0.5Bi0.5）TiO3 （KBT） doped lead-free BaTiO3-based PTC thermistor materials （K0.5Bi0.5）xBa（1-x）TiO3 were prepared by solid state reaction method. Phase component and microstructure of prepared materials were investigated by X-ray diffraction and scanning electron microscope. The electrical properties were studied by measurement system. The effects of boundary stress on Curie temperature （tc） of the prepared ceramics were discussed. The results show that the decrease of boundary stress by building more oxygen octahedrons is conducive to raise tc and the lead-free PTC components with tc of 137 ℃ were prepared.
出处
《电子元件与材料》
CAS
CSCD
2015年第9期40-42,共3页
Electronic Components And Materials
