摘要
采用脉冲激光沉积法制备了斜方相Sc_2W_3O_(12)薄膜。利用X射线衍射仪(XRD)和场发射扫描电镜(FESEM)对Sc_2W_3O_(12)靶材和Sc_2W_3O_(12)薄膜组分、表面形貌和靶材断面形貌进行表征,研究衬底温度与氧分压对薄膜制备的影响。采用变温XRD和热机械分析仪(TMA)分析了Sc_2W_3O_(12)陶瓷靶材和薄膜的负热膨胀特性。实验结果表明:经1000℃烧结6 h得到结构致密的斜方相Sc_2W_3O_(12)陶瓷靶材,其在室温到600℃的温度范围内平均热膨胀系数为–5.28×10-6 K-1。在室温到500℃衬底温度范围内脉冲激光沉积制备的Sc_2W_3O_(12)薄膜均为非晶态,随着衬底温度的升高,薄膜表面光滑程度提高;随着沉积氧压强增大,表面平整性变差。非晶膜经1000℃退火处理7 min后得到斜方相Sc_2W_3O_(12)多晶薄膜,在室温到600℃温度区间内,Sc_2W_3O_(12)薄膜的平均热膨胀系数为–7.17×10-6 K-1。
Orthorhombic Sc2W3O12 thin films were deposited by pulsed laser deposition method. The microstrueture, composition and morphology of the Sc2W3O12 ceramic target and thin films were investigated using the X-ray diffraction （XRD） and field emission scanning electron microscope （FESEM）. The effects of the substrate temperature and oxygen pressure on the Sc2W3O12 thin films were studied. The negative thermal expansion （NTE） properties of the Sc2W3O12 ceramic target and thin film were characterized using high temperature XRD and thermal mechanical analysis （TMA）. Results indicate that the compact orthorhombic Sc2W3O12 ceramic target with excellent NTE can be prepared by sintering at 1000℃ for 6 h. The average thermal expansion coefficient of the orthorhombic Sc2W3O12 ceramic target is -5.28×10^-6 K^-1 from room temperature to 600℃. All the as-deposited Sc2W3O12 thin films are amorphous. The surface of the as-deposited Sc2W3O12 thin film becomes smoother, but it becomes uneven when the substrate temperature increases. The Sc2W3O12 thin film with excellent NTE is crystallized after annealing at 1000℃ for 7 min. The thermal expansion coefficient of the orthorhombic Sc2W3O12 thin film is calculated to be -7.17×10^-6 K^-1 in the temperature range from room temperature to 600℃.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2015年第12期1278-1282,共5页
Journal of Inorganic Materials
基金
国家自然科学基金(51102207)
江苏省高校自然科学基金(14KJB430025)
扬州大学科技创新基金(2010CXJ081)~~
关键词
负热膨胀
薄膜
脉冲激光沉积
钨酸钪
negative thermal expansion
thin film
pulsed laser deposition
Sc2W3O12
