摘要
通过采用双脉冲测试方法,以具有相同电流额定值的SiC MOSFET CMF10120D(1 200V/24A)和Si IGBT IKW25T120(1 200 V/25 A)作为样本,在相同测试条件下研究了两种器件的动态特性、反并联二极管的反向恢复特性和开关损耗。研究发现,SiC MOSFET的开关速度快,开关损耗仅为Si IGBT的69%。最后,利用IPOSIM对两种器件应用于三相逆变器中的结温进行对比研究。结果表明,在输出频率为50 Hz时,Si IGBT的最大结温为166℃,已超过允许的150℃,结温波动为37℃,而SiC MOSFET的最大结温仅为105℃,结温波动仅为19℃;反并联二极管的结温波动基本相同,但Si IGBT反并联二极管的最大结温要高出26℃。因而,在大功率、高温电力电子变换器的应用中,SiC MOSFET更具优越性。
A comparison between the dynamic characteristic, anti-parallel diode reverse recovery and switching losses of SiC MOSFET CMF10120D and Si IGBT IKW25T120, under the same rating（ 1 200 V/24 A） conditions, are studied via double pulse test.It shown that SiC MOSFET has higher switching speed and lower switching losses,the total switching losses of SiC MOSFETs is about 69% of Si IGBT.In addition, the junction temperatures of power devices in the three-phase inverter are simulated with IPOSIM.According to the simulation, it showes that the maximum junction temperature of Si IGBT is 166 ℃,exceedes allowed 150 ℃,the temperature ripple of Si IGBT is 37 ℃.However,the maximum junction temperatures of SiC MOSFET is just 105 ℃, the temperature ripple of SiC MOSFET is just 19 ℃. The temperature ripples of anti-parallel diodes are basically the same.The maximum junction temperature of anti-par- allel diode in Si IGBT is 26 ℃ higher.As a result, SiC MOSFET, by contrast, has superior performance and signifi- cantly improving reliability of high power application.
出处
《电力电子技术》
CSCD
北大核心
2015年第12期23-25,87,共4页
Power Electronics
基金
国家自然科学基金(51107044
51577074)~~
关键词
功率器件
动态特性
结温
power device
dynamic characteristics
junction temperature
